U1H1L5N2D
|
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動(dòng)和2路NMOS的IPM模塊
|
HIN+, LIN+高側(cè)高有效，低側(cè)高有效
|
600V |
5A |
1500 |
4.8/4.6 |
4.8/4.6 |
QFN10-5*6 |
| U1H1L3N2D |
Dual-Half Bridge and Dual-NMOS IPM內(nèi)置高壓半橋驅(qū)動(dòng)和2路NMOS的IPM模塊
|
HIN+, LIN+高側(cè)高有效，低側(cè)高有效
|
600V |
3A |
2000 |
4.8/4.6 |
4.8/4.6 |
DIP8 |
| U6N6ADIP26P |
Full Bridge 6RC-IGBT IPM 內(nèi)置高壓3個(gè)半橋驅(qū)動(dòng),6個(gè)RC-IGBT |
HIN+, LIN+高側(cè)高有效，低側(cè)高有效 |
600V |
6A |
|
9/9.2 |
9/9.2 |
DIP26FP |
| U6N10ADIP26P |
Full Bridge 6RC-IGBT IPM 內(nèi)置高壓3個(gè)半橋驅(qū)動(dòng),6個(gè)RC-IGBT |
HIN+, LIN+高側(cè)高有效，低側(cè)高有效 |
600V |
10A |
|
9/9.2 |
9/9.2 |
DIP26FP |
| U6N15ADIP25 |
Full Bridge 6-IGBT IPM 內(nèi)置高壓3個(gè)半橋驅(qū)動(dòng),6個(gè)IGBT |
HIN+, LIN+高側(cè)高有效，低側(cè)高有效 |
600V |
15A |
|
9/9.2 |
9/9.2 |
DIP25 |
| U6N20ADIP25 |
Full Bridge 6-IGBT IPM 內(nèi)置高壓3個(gè)半橋驅(qū)動(dòng),6個(gè)IGBT |
HIN+, LIN+高側(cè)高有效，低側(cè)高有效 |
600V |
20A |
|
9/9.2 |
9/9.2 |
DIP25 |
浙公網(wǎng)安備33060202001577
浙ICP備2020037221號(hào)-1
